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작성요령	*는 필수. FA, CA, 국문저자 중 본원 소속 내국인 교수 학생은 반드시 한글로 기재 국문저자란에는 모든 저자를 기재하고 외국인은 영문으로 기재하며, 컴머(,)로 구분 제목은 국문 영문란에 해당사항이 있는 경우에만 기재
번호	1448	입력일자	2001-10-07
입력자	유재수	입력 IP	203.237.41.12
분류*		등급*
First Author*		Corresp. Author*
담당교수		게재일자*
저자(국문)*	유재수, 송진동, 임한조, 이용탁
저자(영문)	Jae Su Yu, Jin Dong Song, H. Lim, Yong Tak Lee
제목(국문)*
제목(영문)*	Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers
게재지*
권번호		논문번호
페이지
논문명세	Jae Su Yu, Jin Dong Song, H. Lim, Yong Tak Lee, "Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers," Journal of Applied Physics, Vol. 91, paper No. 4, pp. 2080-2084, 2002.
발표장소		발표형태*
JCR Category
Impact Factor		JCR Cat. 순위	of
진행상황
현재 파일명	JAP02080.pdf (128KB) 파일 삭제
새 파일명
Acknowledgment
Keywords	InGaAs/InAlAs MQW, rapid thermal annealing, QWI
Abstract	We investigated the effects of InGaAs and dielectric (SiO2 and Si3N4) capping layers on the intermixing behavior of InGaAs/InAlAs multiple quantum wells (MQWs) after rapid thermal annealing (RTA). With a fixed RTA time of 45 sec, no appreciable shift of photoluminescence (PL) peak energy was observed in the samples annealed up to 800 oC and 850 oC for the SiO2- and Si3N4- capped MQWs, respectively. But they exhibited a significant improvement of PL intensity without a broadening of the PL spectra after the RTA. After an RTA at 900 oC for 45 sec, a blue shift of 17 meV and a red shift of 25 meV were observed for the SiO2- and Si3N4- capped MQWs, respectively. Microstructures of the InGaAs/InAlAs MQWs observed by cross-sectional transmission electron microscopy before and after RTA reveal that the above improvement of PL intensity is associated with the curing of nonradiative recombination centers in the course of the relaxation of vertical composition modulation along the growth direction in the InGaAs well and the InAlAs barrier layers. The influence of dielectric and InGaAs cap layers on the improvement of PL intensity is explained by the easiness of the cation and anion vacancy diffusion from the dielectric layers and through the InGaAs cap layer.
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