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작성요령	*는 필수. FA, CA, 국문저자 중 본원 소속 내국인 교수 학생은 반드시 한글로 기재 국문저자란에는 모든 저자를 기재하고 외국인은 영문으로 기재하며, 컴머(,)로 구분 제목은 국문 영문란에 해당사항이 있는 경우에만 기재
번호	208	입력일자	2019-09-10
입력자	박문도	입력 IP	172.26.10.17
분류*		등급*
First Author*		Corresp. Author*
담당교수		게재일자*
저자(국문)*	박문도, 민정욱, 이준엽, 황형용, 김시현, 강석진, 강창모, 박정환, 조영달, 이동선
저자(영문)	Mun-Do Park, Jung-Wook Min, Jun-Yeob Lee, Hyeong-Yong Hwang, Cihyun Kim, Seokjin Kang, Chang-Mo Kang, Jeong-Hwan Park, Young-Dahl Jho, Dong-Seon Lee
제목(국문)*	Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy
제목(영문)*	Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy
게재지*
권번호		논문번호
페이지
논문명세	박문도, 민정욱, 이준엽, 황형용, 김시현, 강석진, 강창모, 박정환, 조영달, 이동선, "Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy," Journal of Crystal Growth, 528, pp. 125233, 2019.
발표장소		발표형태*
JCR Category
Impact Factor		JCR Cat. 순위	of
진행상황
현재 파일명	main_1.pdf (730KB) 파일 삭제
새 파일명
Acknowledgment
Keywords	A1. Nanostructures, A1. Growth models, A1. Characterization, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials
Abstract	Nitrogen flow rate is one of the important growth parameters for the growth of group-III nitride nanowires in plasma-assisted molecular beam epitaxy. However, nitrogen flow rate has received less attention compared to the group-III metal fluxes since its effects are not as prominent as that of the metal fluxes. In this study, we investigated the effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires. It was confirmed that reducing the nitrogen flow rate improved the structural uniformity and increased the Al composition. We present a composition change model and show that excess nitrogen suppresses Ga desorption by recombining the Ga atoms, thereby causing a change in the composition of AlGaN. It was also confirmed that the influence of the nitrogen flow rate on the Al composition varied with the growth temperature. These results provide insights into the role of nitrogen flow rate on the growth of AlGaN nanowires and suggest that more sophisticated growth control is possible by considering the nitrogen flow rate.
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