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A. Ahmad
A. Host-Madsen
J. Giglmayr
Kwang Mong Sim
L. Ludman
R. S. Ramakrishna
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Chang Young Park, Jong Min Kim, Jea Su Yu, Yong Tak Lee
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Influence of interlayer thickness on optical properties of multiple InAs QD on GaAs
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Chang Young Park, Jong Min Kim, Jea Su Yu, Yong Tak Lee, "Influence of interlayer thickness on optical properties of multiple InAs QD on GaAs,"
Photonics Conference 2007
, paper TP-7, pp. 99-100, 2007.
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 TP-7.pdf (450KB)
  
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Acknowledgment
Keywords
Abstract
We investigated the effect of interlayer thickness on optical properties of self-assembled multiple InAs quantum dot (QD) structures with growth interruption for 30 sec. The structural properties were optimized by changing growth parameters and the dot density was ~ 5.2-5.9 ¡¿ 10^10 cm-2. The use of thin interlayer of 3 nm in the QDs enhanced the blue-shift due to the strain-induced intermixing in the InAs QD layers. For the interlayer thicker than 7 nm, the blue-shifts are correlated to the dominant high-energy excited state transitions due to the filling of the ground and excited states in the QDs. The energy separation of PL peaks was kept at around 50 meV at room temperature.
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