³í¹® Á¤º¸ Ç׸ñÀ» ¼öÁ¤/»èÁ¦ÇÕ´Ï´Ù.

³í¹® Ç׸ñ ÀÔ·Â
ÀÛ¼º¿ä·É
*´Â Çʼö. FA, CA, ±¹¹®ÀúÀÚ Áß º»¿ø ¼Ò¼Ó ³»±¹ÀÎ ±³¼ö ÇлýÀº ¹Ýµå½Ã Çѱ۷Π±âÀç
±¹¹®ÀúÀÚ¶õ¿¡´Â ¸ðµç ÀúÀÚ¸¦ ±âÀçÇÏ°í ¿Ü±¹ÀÎÀº ¿µ¹®À¸·Î ±âÀçÇϸç, ÄĸÓ(,)·Î ±¸ºÐ
Á¦¸ñÀº ±¹¹® ¿µ¹®¶õ¿¡ ÇØ´ç»çÇ×ÀÌ ÀÖ´Â °æ¿ì¿¡¸¸ ±âÀç
¹øÈ£
7779 
ÀÔ·ÂÀÏÀÚ
2010-02-01 
ÀÔ·ÂÀÚ
ÁÖ°Ç¿ì 
ÀÔ·Â IP
203.237.41.211 
ºÐ·ù*
µî±Þ*
First Author*
Corresp. Author*
´ã´ç±³¼ö
°ÔÀçÀÏÀÚ*
ÀúÀÚ(±¹¹®)*
ÀúÀÚ(¿µ¹®)
Á¦¸ñ(±¹¹®)*
Á¦¸ñ(¿µ¹®)*
°ÔÀçÁö*
±Ç¹øÈ£
³í¹®¹øÈ£
ÆäÀÌÁö
³í¹®¸í¼¼
S.-H Park, S. B. Seo, J.-J. Kim, H.-M Kim, J. Park, Y. T. Lee, "Optical properties of type-2 InGaN/GaAsN/GaN quantum wells light-emitting diodes," 9th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), pp. 115-116, 2009.
¹ßÇ¥Àå¼Ò
¹ßÇ¥ÇüÅÂ*
JCR Category
Impact Factor
JCR Cat. ¼øÀ§
of
ÁøÇà»óȲ
ÇöÀç ÆÄÀϸí
 Optical properties of type-2 InGaN-GaAsN-GaN quant.pdf (1.028MB)    ÆÄÀÏ »èÁ¦
»õ ÆÄÀϸí
Acknowledgment
Keywords
Abstract
ºñ°í
Password

³ª°¡±â